| 摘要 |
PURPOSE:To increase the sensitivity and resolution to electron beams and X-rays and to improve the dry etching resistance by using an F-contg. polymer consisting of specified repeating units. CONSTITUTION:This resist material is an F-contg. polymer consisting of re peating units represented by the formula. The polymer is obtd. by homo polymerizing the phenyl ester of alpha-trifluoromethylacrylic acid. alpha-Tri fluoromethylacrylic acid is reacted with a chlorinating agent such as a mixture of thionyl chloride, phosphorus pentachloride, oxalyl chloride or phosphorus oxychloride with dimethylformamide, or the sodium salt of trifluoromethylacrylic acid is reacted with benzoyl chloride, benzotrichloride or phthaloyl chloride. The resulting alpha-trifluoromethylacrylic acid chloride is reacted with phenol in the presence of a base to synthesize the phenyl ester of alpha-trifluoromethylacrylic acid. |
