| 摘要 |
In the production of a semiconductor device including an MISFET or a one transistor-one capacitor-memory cell, the excellent oxidation resistance of a silicon nitride film formed by direct nitridation, as well as the great oxidation tendency of a covering layer made of, for example, polycrystalline silicon selectively formed on the silicon nitride film, are utilized so as to form various regions of the semiconductor device in self alignment and to prevent a short circuit between such regions. A process according to the present invention comprises the steps of: selectively covering a semiconductor substrate with a relatively thick field insulation film; forming, on the exposed part of the semiconductor substrate, a relatively thin nitride film by direct nitridation; and selectively forming a film of silicon or a metal silicide on the silicon nitride film. A capacitor made of the silicon nitride is formed between the silicon or silicide film and the semiconductor substrate. The capacitor may be one for storing information. |
