| 摘要 |
PURPOSE:To form efficiently a thin film consisting of a sputtered film at a low temp. in a thin film forming device in which a substrate and vapor deposi tion source are positioned to face each other by providing a positive potential electrode and negative potential electrode in combination around the substrate. CONSTITUTION:The film film forming device has the substrate 2 and the target 1 which is the vapor deposition source on the opposite side thereof. The positive potential electrode 3 and negative potential electrode 4 are disposed between the substrate 2 and the target 1 so as to enclose the substrate 2. The positive potential electrode captures the secondary electrons scattering from the target 1. The negative potential electrode captures the positive ions trying to flow into the substrate 2. The collision against the substrate 2 is therefore mostly the neutral vapor deposition particles alone and the collision of the secondary ions and positive ions is suppressed. The low-temp. film formation is realized by such device. |
