发明名称 HEAT-TREATMENT FURNACE
摘要 PURPOSE:To hasten temperature fall speed at the time of furnace temperature fall in case of heat-treatment and to suppress dispersion of thickness of an oxide film and diffusive length on a surface of wafer by a method wherein a heat insulating section is constituted by the first heat insulating member located to innermost end, a cavity section where flows outside fluid and the second heat insulating member located to outermost end. CONSTITUTION:A heat insulating section 11 is constituted by the first heat insulating member 12 located to innermost end (to a heater 6), a cavity section 13 which flows outside fluid (e.g. air) and the second heat insulating member 14. The insulating section 11 is constituted b the first and the second heat insulating member 12, 14 and the cavity section 13 where an in-take valve 16 and an evacuation valve 17 mediate between 12 and 14. By this fact, the temperature fall speed at the time of forming the oxide film rise up remarkablly more than usual, so that dispersion of the oxide film thickness and the like can be prevented, and also the improvemet of productivit can be contrived.
申请公布号 JPS6164130(A) 申请公布日期 1986.04.02
申请号 JP19840186869 申请日期 1984.09.06
申请人 TOSHIBA CORP 发明人 SHIRAI HIDEKI;OGINO MASANOBU
分类号 H01L21/205;H01L21/22;H01L21/31 主分类号 H01L21/205
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