| 摘要 |
PURPOSE:To contrive to simplify operation and to reduce processing man-hours by a method wherein process whshing a substrate forming a semiconductive thin film forming an insulation film is performed continuously by means that only active gas introduced to a same chamber is changed. CONSTITUTION:Prescribed pressure in chamber 1 is set up by means that the raw gas of SiH4 and the like is introduced into the chamber 1 through an induction tube 2 and is evacuated through an evacuation tube 3. Accordingly, the raw gas is resolved by means that high energy generated from UV light (wave length lambda254nm or 185nm) projects through quartz glass layer 4 in the chamber 1, then a semiconductive thin film of a-Si and the like is fored on a substrate 6 which is heated and kept at prescribed temperature by a heater 5. In such a manner, the process of washing a substrate forming a semiconductive thin film forming an oxide film (an insulation film) can be performed continuously by such simple operation as changeovering introduced gas in the same chamber 1. |
