| 摘要 |
PURPOSE:To increase an area simply, and to realize a light-emitting diode plane display device easily at low cost by joining P-type and N-type semiconduc tor layers in which impurities are doped to tetrahedral group amorphous semiconductors. CONSTITUTION:An N-type amorphous silicon layer 3 is deposited onto a trasparent conductive film 2 on a glass substrate 1 by glow-discharging and decomposing a gas, in which PH3 is mixed into silane gas by 0.2%, at a sub strate temperature of 150 deg.C. A P-type amorphous silicon layer 4 is deposited similarly by using a gas in which B2H6 is mixed into silane gas by 0.1%, and a electrode 5 is evaporated onto the layer 4. Accordingly, a light-emitting diode having a large area can be manufactured through a method extremely simpler than a crystal. |
