发明名称 |
Selective etching method for a semiconductor multilayer structure. |
摘要 |
<p>A method of selectively etching one semiconductor material layer (4) of a multilayer structure which underlies another layer, a top layer (1), of the same or a similar semiconductor material without significantly affecting the top layer (1). The method involves pre-etching both layers (1,4) to provide a stepped structure with recesses (10) under an intermediate layer (5), providing r.f. deposited silicon dioxide (11) over the etched structure such that it is thinnest in the recesses (10) from which it is subsequently selectively removed and etching the layer (4) to the required extent whilst the top layer (1) is still covered by r.f. silicon dioxide. The method may be used in the manufacture of mass transport buried heterostructure lasers with the layers 1 and 4 of GalnAsP and layers 3 and 5 of InP, the recesses (10) subsequently being filled with InP by a mass transport process. Top layer (1) and layer (5) may be p-type and layer 3 n-type, top layer (1) providing an electrical contacting layer for the laser.</p> |
申请公布号 |
EP0176166(A1) |
申请公布日期 |
1986.04.02 |
申请号 |
EP19850303005 |
申请日期 |
1985.04.29 |
申请人 |
STANDARD TELEPHONES AND CABLES PUBLIC LIMITED COMPANY |
发明人 |
RENNER, D.S.O. C/O M. JONES M.S. 401-152 |
分类号 |
H01L21/306;H01L21/308;H01S5/00;(IPC1-7):H01L21/308;H01L33/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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