| 摘要 |
PURPOSE:To obtain a semiconductor device, an insulating film and a wiring thereof are not damaged due to stress with wire bonding and which has high reliability, by forming the inter-layer insulating film in double-layer wiring structure while being separated from a bonding pad section and shaping the flat bonding pad section. CONSTITUTION:Since an inter-layer insulating film 4 is formed with the exception of the peripheral sections of bonding pad sections 3a, 6a as a lower layer and an upper layer, the bonding pad section 6a as the upper layer is shaped flatly. Since the bonding pad section 6a as the upper layer is formed in size narrower than the bonding pad section 3a as the lower layer, stepped sections by the bonding pad sections are made gentle, thus also improving the coatability of a passivation film 7 formed to these pad sections. When a wire 8 is bonded with the bonding pad section 6a as the upper layer flatly shaped in this manner, stress due to the bonding is dispersed uniformly to the whole bonding pad sections, thus generating no crack in the passivation film and an Al wiring as a lower layer. |
