发明名称 Semiconductor device having a soft-error preventing structure
摘要 In a semiconductor device, particularly a memory device, radioactive rays emitted from the ceramic material of the package enclosing the LSI chip of the device detrimentally influence the electrical properties of the device. In the memory device, the information is destroyed by the radioactive ray emission, which is referred to as a soft error. In the present invention, a shield plate having a shielding effect against radioactive rays is arranged in the space defined by a cover and a carrier. Thus, the radioactive rays emitted from the cover and carrier are blocked by the shielding plate, preferably made of high purity silicon, as well as by the silicon substrate of the LSI chip.
申请公布号 US4580157(A) 申请公布日期 1986.04.01
申请号 US19830469833 申请日期 1983.03.02
申请人 FUJITSU LIMITED 发明人 HONDA, NORIO
分类号 H01L21/52;H01L21/26;H01L21/58;H01L23/02;H01L23/057;H01L23/16;H01L23/498;H01L23/556;(IPC1-7):H01L23/14;H01L27/04;G11C11/40 主分类号 H01L21/52
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