发明名称 |
Method and apparatus for surface treatment by plasma |
摘要 |
A gas is introduced into a vacuum chamber after the vacuum chamber is evacuated, and a plasma is generated within at least part of the vacuum chamber. The specimen surface is exposed to the plasma so that the surface is treated. A plurality of different gases, such as SF6, N2, and the like, are used as the gas being introduced. The quantity of the gas is changed during the surface treatment. A controller is used as a mechanism for changing the quantity of gas introduced. The controller is operated in accordance with a predetermined program, or by signals obtained by detecting the surface conditions of the specimen during the surface treatment.
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申请公布号 |
US4579623(A) |
申请公布日期 |
1986.04.01 |
申请号 |
US19840642801 |
申请日期 |
1984.08.21 |
申请人 |
HITACHI, LTD. |
发明人 |
SUZUKI, KEIZO;NINOMIYA, KEN;NISHIMATSU, SHIGERU;OKUDAIRA, SADAYUKI;OKADA, OSAMI |
分类号 |
H01L21/205;C23C16/511;H01J37/32;H01L21/302;H01L21/3065;H01L21/318;H01L21/3213;(IPC1-7):H01L21/306;B05B5/02;B05D3/06;B44C1/22 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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