发明名称 Method and apparatus for surface treatment by plasma
摘要 A gas is introduced into a vacuum chamber after the vacuum chamber is evacuated, and a plasma is generated within at least part of the vacuum chamber. The specimen surface is exposed to the plasma so that the surface is treated. A plurality of different gases, such as SF6, N2, and the like, are used as the gas being introduced. The quantity of the gas is changed during the surface treatment. A controller is used as a mechanism for changing the quantity of gas introduced. The controller is operated in accordance with a predetermined program, or by signals obtained by detecting the surface conditions of the specimen during the surface treatment.
申请公布号 US4579623(A) 申请公布日期 1986.04.01
申请号 US19840642801 申请日期 1984.08.21
申请人 HITACHI, LTD. 发明人 SUZUKI, KEIZO;NINOMIYA, KEN;NISHIMATSU, SHIGERU;OKUDAIRA, SADAYUKI;OKADA, OSAMI
分类号 H01L21/205;C23C16/511;H01J37/32;H01L21/302;H01L21/3065;H01L21/318;H01L21/3213;(IPC1-7):H01L21/306;B05B5/02;B05D3/06;B44C1/22 主分类号 H01L21/205
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