发明名称 |
IN KUNSTSTOF GEVORMD TYPE HALFGELEIDERINRICHTING. |
摘要 |
<p>A semiconductor device according to the invention, potted in plastic, is formed by potting a semiconductor chip (1) in a resin (2) which is mixed with silicon dioxide (5) which has a maximum particle size of less than 30 mu m and has spherical particles which serve as a filler for reducing the thermal stress. <IMAGE></p> |
申请公布号 |
NL8502108(A) |
申请公布日期 |
1986.04.01 |
申请号 |
NL19850002108 |
申请日期 |
1985.07.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA TE TOKIO, JAPAN. |
发明人 |
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分类号 |
C08L83/00;C08G59/00;C08K3/00;C08K3/34;C08K3/36;C08L63/00;C08L83/04;H01L23/29;H01L23/31;(IPC1-7):H01L21/56;H01L23/30 |
主分类号 |
C08L83/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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