发明名称 IN KUNSTSTOF GEVORMD TYPE HALFGELEIDERINRICHTING.
摘要 <p>A semiconductor device according to the invention, potted in plastic, is formed by potting a semiconductor chip (1) in a resin (2) which is mixed with silicon dioxide (5) which has a maximum particle size of less than 30 mu m and has spherical particles which serve as a filler for reducing the thermal stress. <IMAGE></p>
申请公布号 NL8502108(A) 申请公布日期 1986.04.01
申请号 NL19850002108 申请日期 1985.07.23
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA TE TOKIO, JAPAN. 发明人
分类号 C08L83/00;C08G59/00;C08K3/00;C08K3/34;C08K3/36;C08L63/00;C08L83/04;H01L23/29;H01L23/31;(IPC1-7):H01L21/56;H01L23/30 主分类号 C08L83/00
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