| 摘要 |
PURPOSE:To make clean multiple wirings by a method wherein, when source.drain regions are formed on a semiconductor substrate and then overall surface is covered with an insulating film before making openings to form lower wirings, semiconductor layer separated by P-N junctions is compared to provide upper wiring through the intermediary of another insulating film. CONSTITUTION:P type source region 2 and drain region 3 are diffusion-formed on the surface layer of N type Si substrate 1 while overall surface is coated with an SiO2 film 4 thin on gate forming part and thick on the other parts. Next openings are made opposing to the regions 2, 3 and an N type layer 5 is epitaxially grown on overall surface while filling the openings and then a P type impurity is diffused to form a P type source wiring 7, a P type gate electrode 8 and a P type drain wiring 9 respectively on the region 2, the gate region and the region 3 separating them by P-N junctions. Through these procedures, they may be covered with an outermost layer 5 coating overall surface with another SiO2 film 10 and then Al upper electrode 11 is mounted on the film 10. |
