Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition

摘要

A method and apparatus for low temperature deposition of epitaxial films using low pressure chemical vapor deposition (CVD) with and without plasma enhancement. More specifically, the process enables CVD of epitaxial silicon at temperatures below 800 DEG C. by use of an in situ argon plasma sputter cleaning treatment of the silicon substrate prior to deposition.