| 摘要 |
PURPOSE:To enable to be hard to peel off the microscopically crystallized Si film from the substrate and to facilitate the production of the titled sensor by a method wherein the hydrogenated amorphous Si film and the microscopically crystallized Si film are formed on the substrate in the abovementioned order. CONSTITUTION:An insulating coated film 2 is formed on a substrate 1 and a hydrogenated amorphous Si(a-Si:H) film 3 is formed thereon. Then, a hydrogen ated microscopically crystallized Si(muc-Si:H) film 4 is formed thereon. When the film 3 is interposed between the film 4 and the substrate 1, peeling of the film 4 is ceased from generating. After an amorphous (a-Si:H) film 5 is made to further deposit on the film 4, an insulative thin film 6 is deposited thereon. After this, a resist 7 is applied, parts of the resist 7, which are located at the parts of contact holes 8, are removed and an etching is performed on the film 6. At this time, if the film 5 is being interposed between the film 4 and the film 6, no effect is exerted to the film 4 so long as the etching is stopped during the time when being performed on the film b. As a result, the manufacturing process of the sensor is simplified. |
