| 摘要 |
PURPOSE:To prepare a thermal head with good efficiency in low cost, by performing the shaping or dividing of a substrate by etching and separately preparing a heat generating part and a lead wire part before assembling both of them. CONSTITUTION:An SiO2 film is adhered to a silicon single crystal substrate 11 as a protective film 12 to form a pattern and the substrate 11 is shaped by anisotropic etching. Next, a heat generating part 1 having a conductive film 6 and a heat generating resistor film 5 is formed and an oxidation film 7 and an abrasion resistant film 8 are formed thereon. A reinforcing film 14 is applied and the back surface of the substrate 11 is removed until a conductor surface is exposed. A V-shaped groove 13 is formed to the part corresponding to the joint of heat generating parts 1 between adjacent substrates 11 by anisotropic etching. After a resistance value was measured, the heat generationg parts 1 are divided and classified to predetermined ranks by a resistance value. A number of heat generating parts 1 satisfying a necessary length are taken out from ones of which the resistance values are classified to the same rank and spliced to a separately prepared lead wire part. |
