| 摘要 |
PURPOSE:To enable to accurately measure the distribution of implanted impurities without being affected by other parts even when an insulating film is present on the surface of a semiconductor wafer by a method wherein a beam of light is made to irradiate on the desired microscopic area of the semiconductor wafer to be measured utilizing the principle of ellipsometry. CONSTITUTION:The laser beam emitted by a laser beam source 8 is made irradiate the desired point to be measured on a wafer 1 through a polarizer 9 and a compensator 10, and the light entering a photodetector 12 is zeroed by rotating the polarizer 9 and an analyzer 12. The rotating angle from the reference position of the polarizer and the analyzer at this time is set at P and A respectively, and a physical quantity is introduced in accordance with said measured values P and A and the prescribed physical relation. Said measured physical quantity is related to the wavelength of the laser beam, the refractive index of the atmospheric air, the real number part NS and the imaginary number KS of the complex refractive index of the conductor, the real number NL and the imaginary number KL of the complex refractive index of the thin film on the conductor, and the film thickness TL of the thin film on the substrate, is turned to NS and KS, and can be calculated analytically. Also, if the values NL, KL and TL of the insulating film are already known, the values can be calculated analytically even when an insulating film is present on the substrate. |
