| 摘要 |
PURPOSE:To planarize the surface in a structure in which seeds are extending over an insulating film by changing the amorphous Si film on and in the neighborhood of an epitaxial Si to be monocrystalline structure. CONSTITUTION:On a monocrystalline Si substrate 1, an SiO2 film is formed as an inter-layer insulating film 2, and a part of the film 2 is then removed by anisotropy etching to provide an opening 5 having vertical side walls. By growing Si only on the substrate within the opening 5 by the selective vapor epitaxial growth, the opening 5 is substantially filled with a monocrystalline Si 6. Then, a polycrystalline Si film 7 is deposited by the LPCVD process, and Si ions are injected into the film 7 to change the film 7 to an amorphous Si film 8. Then, solid phase epitaxy is generated from the Si 6 by heat treatment, whereby the amorphous Si on the Si 6 and on the film 2 in the neighborhood thereof becomes a monocrystalline Si 9. A monocrystalline Si portions 10 formed on the film 2 are laterally extending from the edge of the film 2. By performing beam-annealing using these portions as seeds, the remaining layer 8 on the film 2 is changed to the layer 9. |
