| 摘要 |
<p>PURPOSE:To prevent any step difference disconnection from happening while increasing the capacity of compound wiring by a method wherein a polysilicon wiring with large doping capacity is formed on an Si substrate making use of the excellent stap coverage of the polysilicon wiring. CONSTITUTION:An SiO2 layer 2 is formed on an Si substrate 1 and after forming a contact on a specified position, a silicide layer 3 such as Pd2Si etc. is formed. Then a polysilicon wiring 4 is formed on the SiO2 film 2. Later a heat resisting electrode wiring 5 made of e.g. Pd/Ti electrode is formed on the wiring 4. The electric capacity of wiring may be increased by means of forming a compound wiring of the heat resisting electrode wiring 5 and the polysilicon wiring 4. In order to increase the wiring current, a material with large doping capacity may be applicable for the polysilicon wiring 4. Besides, the heat resisting electrode wiring 5 may prevent any step difference disconnection from happening making use of the excellent step coverage of the polysilicon wiring 4.</p> |
