| 摘要 |
PURPOSE:To shorten the manufacturing process to the end products by effecting the removal of a passivation film on a memory film, ion implantation for writing through an interlayer insulating film or the like and annealing at photoetching of the passivation film. CONSTITUTION:After H2 annealing of an Al wiring 9, a passivation film 10 is deposited on the overall surface of the uppermost layer. Then a hole 12 and a hole 11 for ion implantation are formed simultaneously by using a resist mask for forming the hole 12. The hole 11 is formed by selectively removing the passivation film on the memory set which is made into a depletion type MOSFET by ion implantation of P ions. Accordingly, P-ion implantation for writing is effected by using the passivation film 10 as a mask. This ion implantation is effected by high energy so that the ion implantation into a channel region 13 through an interlayer film 7 and a gate electrode 4 becomes possible. After that, H2 annealing at 450 deg.C, for example, is made thereby completing writing of ROM. |
