| 摘要 |
PURPOSE:To make uniform both distribution of gas ions, to be made incident on a substrate, and the speed of sputter-etching by a method wherein a magnet is arranged on the side of an opposing electrode facing a wafer, and high density plasma is generated on the side of the opposing electrode which is separated from the wafer. CONSTITUTION:A substrate 9 is conveyed to the insulating plate 8 located on the substrate electrode 7 of a sputter-etching device, and the vacuum chamber 1 wherein the substrate 9 is arranged is formed into a low pressure atmosphere using a vacuum piping 2 and a gas introducing pipe 3. High frequency power of a high frequency power source 18 is applied between the substrate electrode 7 and an opposing electrode 12, and plasma 21 is generated between electrodes 7 and 12. At this time, a line of magnetic force 15 is formed using the circular magnet 14 provided on the electrode 12, and high density plasma 22 is formed in the vicinity of the electrode 12. Also, negative self-bias is generated on the surface of the insulating plate 8 by the application of high frequency power, and the ions in the plasma 21 are attracted to the insulating plate 8. The distribution of the gas ions made incident on the substrate 9 is made uniform, and the speed of sputter-etuhing is also made uniform. |
