| 摘要 |
PURPOSE:To enable to improve the pattern precision of a film after the unnecessary parts thereof is lifeted-off by a method wherin an RF bias sputtering method is used. CONSTITUTION:A film 2 is formed on the surface of a substrate 1. Then, steppings vertical to the surface of the substrate are formed by a reactive ion etching (RIE) method using photo resists 3. Films 4, each having a constant slant at its stepping parts, are made to grow by an RF bias sputtering method without removing the photoresists. Then, by selecting properly bias to be applied to the substrate by an RF bias sputtering method, an etching is performed on parts of the steppings at a constant angle in the direction parallel to the substrate and the pats are etched to a state that the photo resists re made to expose to some degree. In this state, the photo resists 3 are removed to remove the unnecessary parts of the films 4, which remain on the photo resists. |
