| 摘要 |
PURPOSE:To enable to decide whether or not the dimension of a photo resist is proper or improper without measuring the dimension thereof by a method wherein punched patterns in the specific dimension and left patterns in the specific dimension are provided on the titled pattern mask in addition to element patterns. CONSTITUTION:Left patterns are provided on the upper row and punched patterns are provided on the lower row. A mask patter in a dimension, in which a photo resist pattern within the limit of a resolution to be decided by a combination of an exposing device, a photo resist material and so forth is jut obtained, is arrayed at the center of the respective row and a mask pattern in a dimension smaller slightly than those of the aforementioned patterns is arrayed to the respective left direction of the aforementioned patterns, and furthermore, a mask pattern larger slightly than the pattern arranged in the center of the respective row is arranged at the right end of the respective row, and by utilizing reversely the defect of a resolution, which is limited to an aligner and a photo resist, when a pattern in a dimension among the patterns, which cannot be resolved, is resolved, the exposure and developing processes are decided to be improper and the dimension of the photo resist pattern obtainable in this case is decided to the one not being set in the proper dimension as desired. |
