| 摘要 |
<p>PURPOSE:To protect an element region, other than its cutting margin, from breaks and cracks by a method wherein a first groove is formed by etching in the cutting margin of a semiconductor substrate, a second groove is formed by cutting from the rear aligned to the first groove, and then the semiconductor substrate is subjected to cleaving. CONSTITUTION:By the double side matching method, etching masks 7, 7' are patterned respectively on both sides of a composite semiconductor wafer 12, one in a cutting margin 3 on the compound semiconductor wafer 12 and the other at a scribed position 6 on the rear of the wafer 12. The portions to be exposed are subjected to etching for the formation of grooves 8, 9 on both sides of the wafer 12, whereafter the etching masks 7, 7' are removed. A sheet 2 made of polyvinyl chloride is applied to the surface of the wafer 12, whereafter a cut is provided in line with the rear side groove 9 of the wafer 12. The depth of the cut should be approximately 2/3 of the thickness of the wafer 12. Next, a cleaving line 10 is provided in the wafer 12 under a roller for the separation of the wafer 12 into individual semiconductor elements.</p> |
