| 摘要 |
PURPOSE:To prevent the destruction of a gate oxide film or the cavity breakdown, by a method wherein all the surface excepting pad openings other than electrode pads for grounding and storage parts, and selected parts in the storage parts are covered with Al, and the whole part is made the electrode for grounding by connecting this Al to the electrode pad for grounding. CONSTITUTION:The electrode pad 11 for grounding, parts 13 other than storage parts and selected parts 15 in the storage parts are covered by Al 18 on a passivation film 17, and are connected to the grounding electrode 11. All the Al part becomes the grounding electrode, and IC are sealed. On the passivation film 17, Al 26 covering the selected part 15 at the storage parts are formed to the lattice type regularly with a constant pitch, and are connected with Al 13 at the end of the storage parts, and Al 26 are made not to cover FAMOS. |
