| 摘要 |
PURPOSE:To suppress the induction of a channel at the portion by separating between elements by an oxide film different from an insulating substrate. CONSTITUTION:A source electrode 15 and a drain electrode 16 are disposed through a silicon nitride (SiN) gate insulating film 13 and an amorphous silicon film 14 on a gate electrode 12 formed on an insulating substrate 11. A silicon dioxide (SiO2) film 17 is formed 3,000Angstrom of thickness on the lower surface of the film 13 having SiN of 3,000Angstrom of thickness disposed on the region except the element region. Thus, since the dielectric constant of the SiO2 is 3 to 4 to be approx. 1/2 of the SiN, it substantially becomes equivalent to that an insulating film having a thickness of approx. 3 times of the element region is formed on the gate electrode, and the formation of a channel except the element region by a voltage applied to the gate electrode can be sufficiently suppressed. |
