| 摘要 |
In a method for producing a selenium rectifier, a thin base selenium layer is first placed upon a metallic carrier electrode. This base selenium layer is converted into a metal selenide layer by means of a heat treatment, at a temperature above 250 DEG C., through reaction with the metal of the carrier electrode, to from a barrier-free junction. Thereafter, the unconverted remaining selenium layer is coated with the main layer of the selenium semiconductor body and the entire semiconductor body is thermally converted or formed into the best conducting modification. The selenium, used for the selenium layer, is so doped with a halogen and another particularly metallic element, that the conductivity of the remaining selenium layer, following the thermal forming of the entire semiconductor body, is from 5 to 50 times the conductivity of the main selenium layer.
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