| 摘要 |
The invention relates to a support (100) for a high-speed component (30) in particular a hyperfrequency component. The support is in the form of a stack of high dielectric constant ceramic sheets which are sintered and which are suitable for receiving surface metallization (21-24) to constitute connections to the terminals of the component. According to the invention, the support includes a central zone (110) emerging in the surface of the support with substantially the same area as the supported component (30) and is immediately adjacent to the location of the future supported component. This zone is formed of low dielectric constant material. Outside the central zone and peripheral thereto, the support includes at least one internal metallization (131, 132) at shallow depth (e) formed by a conductive pattern carried by one of the sheets of the stack and connected to a ground connection (141, 142). Each portion of the internal metallization (131, 132) corresponds to a portion of the surface metallization (21, 22) and is located opposite said corresponding portion so as to constitute a decoupling capacitor for the terminal of the supported component which is connected to the said corresponding portion of the surface metallization. |
