发明名称 SPATTERING METHOD AND ITS DEVICE
摘要 PURPOSE:To increase an adhering speed of a target atom or a particle to a substrate, and also to improve a utilization efficiency of a target by generating a plasma of a high density in the whole area on the surface of the target, and confining it. CONSTITUTION:A line of magnetic force 22 of a magnet 10 of a target 1 side is set to as to go to a cathode 3, and a line of magnetic force 23 of a magnet 13 of a substrate 11 side is set so as to go to a substrate holder 12 side. A microwave from a microwave generating source 17 is led into a spatter chamber 12 through a waveguide 20. The microwave is made incident in parallel to the lines of magnetic force made by the magnets 10, 13, therefore, an atmosphere gas of a spatter chamber 19 is ionized, and it becomes a plasma state. The plasma is confined between the target 1 and the substrate 11 and becomes a high density state. When a voltage is applied between electrodes 3, 6, an ion in the plasma is accelerated and collides with the surface of the target 1. An atom or a particle which has been expelled is made to adhere to the surface of the substrate 11 and accumulated.
申请公布号 JPS6160881(A) 申请公布日期 1986.03.28
申请号 JP19840180532 申请日期 1984.08.31
申请人 HITACHI LTD 发明人 SAITO YUTAKA;SUZUKI YASUMICHI;SANO HIDEZO;SHIMIZU TAMOTSU;AIUCHI SUSUMU
分类号 C23C14/42;C23C14/34;C23C14/35;C23C14/44;H01J37/34;H01L21/203 主分类号 C23C14/42
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