| 摘要 |
<p>PURPOSE:To correct easily a defective product by causing a lattice defect in a correction layer through illuminating laser light at the defective portion of a photomask and performing a wafer transfer with a specific wavelength light causing a photoabsorption by this lattice defect. CONSTITUTION:After a pattern of a chromium film 2 is formed on a transparent substrate 1 provided with a protective film 5 and a correction layer 4 made of alkali halide crystal all over the surface of a glass substrate 3, a photomask is obtained. After a high output violet ray pulse laser 7 is illuminated on a micro portion including a defective portion 6 of the photomask, a lattice defect region 8 is formed on the correction layer 4 of the region just under a defective portion. As this region 8 is opaque to a specific wavelength light 9, when a wafer transfer is performed with the light 9, a pattern is transferred as it is precisely without exposing directly the defective portion 6 on a resist on the wafer 10.</p> |
