| 摘要 |
PURPOSE:To eliminate the invasion of ion substance such as salt by forming a gate electrode in a field effect transistor of recess gate structure in T shape in the region displaced from the center line of the recess to a source side, thereby increasing the withstand voltage between a gate and a drain and forming the recess in a cavity. CONSTITUTION:A photoresist film 8 is formed on a region between a drain which includes a gate electrode region, a middle layer 7 is sidewisely etched in the length corresponding to the length of a gate electrode, a middle layer 6 is sidewisely etched to the drain side end of a recess 10 to for a cavity at the lower portion. After an intermediate layer 9 is formed with a substance which is not etched by an etchant of the semiconductor for forming an active layer 2, it is lifted off as a source side half of the etching mask for forming a recess, and the recess 10 is formed on the region corresponding to the cavity coated by the layers 5, 7, 9. A metal layer 11 is formed in a gap between the source side half 9 of the recess forming etching mask and the layer 7 as a gate electrode 11a. |
