| 摘要 |
PURPOSE:To enable to independently set the characteristics of a p-n junction element and a Schottky barrier element with good controllability by forming a Schottky gate electrode on the second channel region, heat treating it and alloying the electrode and a semiconductor substrate. CONSTITUTION:n type channel regions 2, 3 are formed on a semi-insulating GaAs substrate 1. Then, after an Si3N4 film 4 is coated on the substrate 1, a hole 4a is formed. Then, a gate region 5 made of a p<+> type layer is formed by highly thermal diffusion. Thus, the threshold value voltage Vr of a J-FET14 is controlled to the prescribed value. Then, holes 4b-4e are formed at the prescribed portions of the film 4, and source electrodes 6, 7 and drain electrodes 8, 9 are formed on the substrate 1. Then, after a hole 4f is formed and a Schottky gate electrode 10 is formed on the substrate 1, the electrode 10 and the substrate 1 are alloyed by low temperature treating to control the threshold voltage Vr of a Schottky gate FET13 to the prescribed value. |
