| 摘要 |
PURPOSE:To obtain a p-n junction diode having no notch of junction boundary by continuously providing A1-xBx layer (0<x<1) in the intermediate of the first and second conductive type different semiconductor layers A and B. CONSTITUTION:A substrate uses a low resistance n type GaAs substrate (100 plane). 5 types of evaporation cells are set for Zn, Se, Te, Ga, Cu. The material uses special 5N of Se, and the other use all 6N. Ga is used as doner, and Cu is used as acceptor. A ZnSe:Ge layer, ZnSe1-xTex:Ca, Cu layer (x continuously varies 0 to 1 from the ZnSe layer), and ZnTe:Cu layer are sequentially formed on the heated substrate. The densities are controlled by controlling the temperature of the respective cells. |
