| 摘要 |
PURPOSE:To isolate an insulator between elements positively, to reduce a region required for isolating the elements and to improve the degree of integration by joining an silicon substrate with an insulating film in another silicon substrate, on one main surface thereof the insulating film is formed, and shaping an isolation groove reaching the insulating film from the main surface of one substrate. CONSTITUTION:One main surface of a silicon substrate 30 is mirror-polished, and thermally oxidized to form an insulating film 31 in predetermined film thickness, and another silicon substrate 32 with a mirror-polished main surface is fast stuck and joined integrally so as to hold the insulating film 31 in a sandwich manner. One silicon substrate 32 is photoetched and treated and RIE- treated to shape isolation grooves 33 reaching the insulating film 31, and the isolation grooves 33 and an insulating film 34 onto the surface of the silicon substrate 32 are formed through thermal oxidation. When a polycrystalline silicon layer 35 is applied onto the surface and the insulating film 34 protruding from the isolation grooves 33 and the polycrystalline silicon layer 35 are removed, element regions 36 electrically isolated from other regions completely by the isolation grooves 33 and the insulating film 31 can be obtained. |
