发明名称 AL ALLOY ULTRA FINE LEAD FOR CONNECTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To remarkably reduce generation of radioactive particles and eliminate generation of soft error by reducing content of U and Th which is inevitably contained as the impurity to Al alloy ultra fine lead wire to less than 10ppb. CONSTITUTION:A high purity Al with purity of 99.999% including U of 210ppb and Th of 90ppb is used and it is adjusted to the high purity Al with respective contents of U and Th of under 10ppb by executing, once or twice or more, the belt melting refining. As a result, the high purity Al is melted by the vacuum melting method and a kind or two kinds of Si: 0.5-2%, Mg: 0.1-2% (where, Si+Mg: 2% or less) are added as the alloy component thereto.
申请公布号 JPS6159760(A) 申请公布日期 1986.03.27
申请号 JP19840181555 申请日期 1984.08.30
申请人 MITSUBISHI METAL CORP 发明人 HOSODA NAOYUKI;TANAKA MASAYUKI;UCHIYAMA NAOKI
分类号 C22C21/00;C22C21/02;C22C43/00;H01L21/60;H01L23/49;H01L23/556 主分类号 C22C21/00
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