| 摘要 |
PURPOSE:To pattern a multiplayer dielectric thin-film with high accuracy by forming an organic resist pattern layer onto the multilayer dielectric thin-film, projecting far ultraviolet beams from a specific wavelength region and dry- etching a multilayer dielecetric layer section not coated with the resist pattern layer. CONSTITUTION:An organic resist pattern layer 3 having a predetermined shape is formed onto a multilayer dielectric thin-films L and laminated alternately. Intense far ultraviolet beams 4 having illuminance of 300-2000mW/cm<2> and wavelength of 200-320nm are projected, dielectric layer 2 sections not coated with the organic resist pattern layer 3 are etched by reactive ions by using a gas, such as CF4, CF4/O2, CF4/CHF3, CF4/CCl3F, CF4/CClF3, etc., and the multilayer dielectric thin-film 2 sections not coated with the organic resist pattern layer 3 are dry-etched. The organic resist pattern layer 3 is peeled, thus obtaining a patterned product. |
