| 摘要 |
PURPOSE:To prevent increase of voltage at the input terminal by connecting the collector of an NPN transistor in an electrostatic breakdown preventive circuit to the input terminal through a Schottky barrier transistor. CONSTITUTION:An electrostatic breakdown preventive circuit P is composed of a Schottky barrier diode D1, an NPN transistor T1 and a resistor R1. The anode of diode D1 is connected to the input terminal I of TTL circuit and the cathode is connected to the collector of the NPN transistor. The base of NPN transistor is grounded through the resistor R1 and the emitter is directly grounded. |
