| 摘要 |
PURPOSE:To uniformly anneal the whole surface of a sample to be annealed by variably controlling the beam strength in an electron beam irradiation mechanism in accordance with a reflection light from a semiconductor film caused by irradiation of light beam. CONSTITUTION:An irradiated light 39 from a light beam 38 irradiated on a sample 10 is reflected by a reflection mirror 36 and moreover, reflected by the sample 10, and then received by a light detector 40 via vibrating mirrors 35 and 34 and a half mirror 33. The output of the light detector 40 is fed back to an electron beam irradiating mechanism 20. In the electron beam irradiating mechanism 20, the beam strength is variably controlled in inverse proportion to the magnitude of the output of the light detector 40. |
