A NOVEL SEMICONDUCTOR DEVICE

摘要

A new solid state field effect bipolar device provides for high current gain and low input capacitance, while avoiding the "punch-through" effects that limit the downward scaling of conventional bipolar and field effect devices. The device typically compromises a metallic (e.g. a metal or silicide) emitter, which makes ohmic contact to a semi-insulator; a channel terminal which contacts an inversion layer formed at the interface between the semiinsulator and a semiconductor depletion region; and a collector, which is the semiconductor bulk. The novel device controls the flow of majority carriers from the emitter into the collector by the biasing action of charge in the inversion channel. The technique can be utilized in making a transistor, photodetector, thyristor, controlled optical emitter, and other devices.