| 摘要 |
PURPOSE:To inhibit side etching generated when a sample is etched by plasma by employing a gas containing chlorine by mounting a chlorine radical absorbent material where exposed tog as plasma. CONSTITUTION:A chlorine radical absorbent material 20 is fitted where exposed to the gas plama of a gas containing chlorine. An electrode 11 and an elecertrode 12 opposed each other are mounted internally in parallel in a cham ber such as a treating chamber 10 while forming a discharge space 13 and being faced in the vertical direction, and a gas dispersion chamber 14 is shaped into the electrode 11 of the elecetrodes opposed each other while a large number of gas discharge holes 15 are bored opened to the discharge space 13. A quartz plate 18 is placed on the side surface of the discharge space 13 of the electrode 12 while a discoid Cl* absorbent material 20 is fitted approximately centering around the center of the electrode 12, and the level of the surface of the Cl* absorbent material 20 is made approximately the same as the level of the sur face of the quartz plate 18. The Cl* absorbent material 20 is formed by Si, Al, C, etc. easy to absorb Cl*. |
