| 摘要 |
PURPOSE:To obtain an electrode having preferable Shottky characteristics by forming a metal layer made of W, Re or W-A alloy, Re-A alloy on an N type III-V group semiconductor crystal, and heat treating in hydrogen atmosphere. CONSTITUTION:With an SiO2 layer as a mask Se ions are selectively implanted on a semi-insulating GaAs substrate 11 added with chromium, heat treated in hydrogen stream to obtain an n type GaAs crystal 12. Then, after an SiO2 layer 13 is formed, a resist 15 is coated, holes are opened at the resist 15 and the layer 13 in the form of a Schottky electrode, part of the surface of the crystal 12 is exposed, and Re or W alloy metal layers 14, 17 are formed. Then, the layer 15 is dissolved and removed, and heat treated in high purity hydrogen. Then, the resist 15 is coated, holes are opened at the resist and the SiO2 layer in the form of ohmic electrode, part of the surface of the crystal 12 is exposed, and Au-Ga alloy metal layers 16, 17 are formed. Then, the resist layer is dissolved and removed, heat treated in high purity argon stream to obtain ohmic electrode layers 14, 16. |
