| 摘要 |
PURPOSE:To enhance the electron mobility by forming an amorphous silicon compound layer between an insulating film of a semiconductor layer and an ultrafine crystal silicon compound layer. CONSTITUTION:A metal layer 2 is selectively coated on an insulating substrate 1. Then, a gate insulating layer 3, an amorphous silicon compound semiconductor layer 14, an ultrafine crystal silicon compound conductor layer 24, and an insulating layer 5 are sequentially coated on the entire surface. Then, a portion to become TFT channel in which the layer 5 is superposed on the layer 2 is allowed to remain, the layers 14, 24 are selectively exposed, and an amorphous silicon compound semiconductor layer (n<+>-muC layer) 6 which includes an impurity is coated on the entire surface. Then, the layers 6, 24, 14 are selectively removed, an insulating layer is included in the remaining portion 5' to form insularly. Further, after the hole 7 is formed on the layer 3, a metal layer 9 is coated on the overall surface, source and drain wirings 8 are formed partly on the layer 6' coated on the layers 14', 24', and gate wirings 9 are formed to include the hole 7. With the source and drain wirings 8 as a mask an n<+> type muC layer on the layer 5' is removed. |
