发明名称 MASK FOR PRODUCING SEMICONDUCTOR
摘要 <p>PURPOSE:To prevent the electrostatic charge of an insulator substrate and to test exactly a micropattern by providing a light transmittable and charge conductive film covering the pattern of a metallic material on the insulating substrate and grounding the conductive film. CONSTITUTION:The pattern 12 of chromium or chromium oxide is formed on an insulator, for example, a glass substrate 11 and the pattern 12 is coated with the conductive film 13. The film 13 is grounded to the earth 15 by an electric wire 14. The charge generated in the surfaces of the substrate 11 and the film 13 is grounded and therefore the secondary electrons radiated from the pattern 12, the substrate 12 and the film 13 have consequently the peak value conforming to the design value. The analysis of the secondary electrons by a secondary electron detector indicates exactly the shape of the chromium pattern 12.</p>
申请公布号 JPS6159449(A) 申请公布日期 1986.03.26
申请号 JP19840181920 申请日期 1984.08.31
申请人 FUJITSU LTD 发明人 KOBAYASHI KENICHI;MIYAHARA ATSUSHI
分类号 G03F1/00;G03F1/40;H01L21/027 主分类号 G03F1/00
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