| 摘要 |
PURPOSE:To obtain higher sensitivity, etc. with a photoreceptor contg. a-Si by using a film which has the optical band gap wider then the optical band gap of the a-Si and has the impurity lever corresponding to the energy of the light to be absorbed to constitute a carrier generating layer. CONSTITUTION:A carrier transfer layer 5 consisting of the B-doped hydrogenated a-Si, etc. is provided via a blocking layer 6 on a substrate 2. The carrier generating layer 4 which consists of the amorphous film having the band gap wider than the optical band gap of the a-Si and having the impurity level corresponding to the energy of the light to be absorbed and generates carriers by absorbing the light of a long wavelength is formed thereon. The embodiment of the layer 4 is exemplified by an amorphous film doped with a heavy metallic element (e.g.; gold, copper) on the amorphous hydrogenated silicon carbide. A surface protective layer 3 is formed thereon, by which the intended electrophotographic receptor is obtd. |
