| 摘要 |
PURPOSE:To allow sufficient emitter short-circuit by a method wherein a short- circuit layer is buried in lattice form in the N<-> region in the neighborhood of a P-emitter layer, and the end is provided with a short-circuit hole layer which is connected to the anode. CONSTITUTION:An N<+> layer 1 of lattice form is buried in the NB<-> layer 2'' in the neighborhood of a PE 1'' by the epitaxial method, and the end of the N<+> layer 11 is provided with an N<+> layer 8''; then, one end 12 of the layer 11 is connected to the anode 5. When negative bias is impressed on a gate electrode 7, holes h' of the layer 2'' are rapidly led out of P<+> layer 3, and a depletion layer (a) is formed around the channel region. This construction enables electrons e' leaking out of an NS<-> 2 during channel-off to be easily led out by the elimination of the influence of the diffusion potential Vd between NS and PE because the emitter short-circuit part has been provided in the NB<-> layer, and the extinction time of element is reduced. Besides, the ON-voltage between the NB layer 2'' and the buried N<+> layer decreases, and the lead-out of carriers to the anode 5 is facilitated at the time of extinction, resulting in further reduction in extinction time. |
