| 摘要 |
PURPOSE:To obtain a photoelectric conversion device, which deteriorates little to light irradiation, by a method wherein the electrode on the side of the insulating substrate and the electrode on the prescribed non-single crystal semiconductor adjacent to the right of the aforementioned electrode are coupled together and the crystallinity of the active region is made to promote than that of the semiconductor of the coupling part. CONSTITUTION:An ITO film 2 on a glass plate 1 is isolated by grooves 13 and a non-single crystal semiconductor layer 3 having a P-I-N junction and being added H or halogen therein is deposited on electrodes 15. The layer 3 is isolated by a groove 14 away by 100mum to the left from the groove 13, and a surface conductive film 5 and a coupling part 10 are formed. Then, a strong light (YAG pulse laser) 25 having a wavelength of 500nm or more is irradiated in between the sections 33-34 and 33'-34' of the layer 3 to make the crystallinity of the (i) layer promote specially, to lessen the deterioration of the layer 3 due to light irradiation, and at the same time, to make spreading of a depletion layer extend into the (i) layer. According to this constitution, even though the (i) layer is made as thick as 2mu, the deterioration of the layer 3 due to light irradiation is reduced, and moreover, the photoelectric conversion current is increased. After this an Si3H4 protective film 21 is performed and the photoelectric conversion device is completed. |
