Liquid phase epitaxial growth process

摘要

A liquid phase epitaxial growth process for particular use in growing semi-insulating epitaxial layers of III-V semiconductor compounds such as indium phosphide, indium gallium arsenide, and indium gallium arsenide phosphide. The high resistivity of the layer is achieved by doping it with a deep level dopant such as cobalt, in a concentration in the range of 0.6 to 1.0 atomic percent, and by purifying the growth solution to an impurity concentration of at most 1x1016 atoms per cubic centimeter.