| 摘要 |
PURPOSE:To assure accurate bonding process by a method wherein, when a pad electrode is formed on an outer connecting electrode on a semiconductor substrate, overall surface is coated with metallic film while the part excluding the electrode to be plated is covered with mask to be formed into a pad electrode and then metallic film excluding mask and pad electrode is removed to provide a bump electrode on the pad electrode. CONSTITUTION:An Si substrate 1 formed of circuit element is coated with an SiO2 film 2 wherein an electrode 3 connecting to outer circuit is formed by evaporating Al-Si or Al. Next overall surface is covered with a PSG film 4 with a window on the part 5 opposite to the electrode 3 while the electrode 3 exposed to the window only is coated with plating electrode film. At this time, the film 6 comprising multiple layered metallic film such as Ti-W, Cr-Cu-Au etc. prevents any mutual diffusion between the bump electrode 7 from happening. Finally the bump electrode 7 comprising Au, Ag, Sn/Pb etc. may be provided on the film 6 to be heat-treated. |
