发明名称 |
Integrated circuit with stress isolated Hall element |
摘要 |
A silicon integrated circuit includes a centrally located Hall element having an annular moat region surrounding the Hall element to isolate it from built in stresses in adjacent parts of the integrated circuit. The moat comprises at least one annular isolation wall, but preferably two concentric isolation walls. This moat construction also leads to a reduction in dependency of Hall element symmetry upon process variables.
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申请公布号 |
US4578692(A) |
申请公布日期 |
1986.03.25 |
申请号 |
US19840600875 |
申请日期 |
1984.04.16 |
申请人 |
SPRAGUE ELECTRIC COMPANY |
发明人 |
HIGGS, JACOB K.;HUMENICK, JOHN |
分类号 |
H01L43/06;H01L21/761;H01L27/22;(IPC1-7):H01L27/22;H01L27/04 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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