发明名称 |
Method for growing monocrystalline silicon through mask layer |
摘要 |
A monocrystalline silicon layer is formed on a mask layer on a semiconductor substrate. An apertured mask layer is disposed on the substrate, and an epitaxial layer is then grown by a two-step deposition/etching cycle. By repeating the deposition/etching cycle a predetermined number of times, monocrystalline silicon will be grown from the substrate surface, through the mask aperture, and over the mask layer.
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申请公布号 |
US4578142(A) |
申请公布日期 |
1986.03.25 |
申请号 |
US19840608544 |
申请日期 |
1984.05.10 |
申请人 |
RCA CORPORATION |
发明人 |
CORBOY, JR., JOHN F.;JASTRZEBSKI, LUBOMIR L.;BLACKSTONE, SCOTT C.;PAGLIARO, JR., ROBERT H. |
分类号 |
C30B25/02;C30B25/18;H01L21/20;H01L21/762;(IPC1-7):C30B25/04 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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