| 摘要 |
PURPOSE:To prevent generation of cracks on the resin, frame and element of the titled semiconductor device as well as to improve the dampproof property of the device by a method wherein, after an organic thin film of specific struc ture is ormed on the surface of at least one of a semiconductor element and a lead frame by perorming a plasma polymerizing method, a resin sealing is performed hereon. CONSTITUTION:A monomer organic thin film, having the structure of H3Si-O- SiH3, RH2Si-O-SiH2R, R2HSi-O-SiHR2, R3Si-O-SiR3 (R is the alkyl radical of 1-3 C in this case), is coated on the surface of at least one of a semiconductor element and a lead frame. Also, CH2=CHR (R indicates H, CN, C6H6, a fluoric compound and the like) is used for said monomer. Subsequently, the entire body including said thin film is sealed by ordinary resin, or desirably with epoxy resin having excellent dampproof property. Through these procedures, stress is absorbed by a plasma polymerized film, and the exfoliation of the frame and the resin interface can be prevented. |
